一、基本信息

姓??? 名：王文娟??????????????????

性??? 别：女?????????????????????????

籍??? 贯：江苏????????????????

出生年月：1980年8月??????????????????

毕业院校：北京邮电大学?????????????????????????????????????????????????

学历学位：研究生/博士????????????????????

技术职务：研究员?????????????????

导师类别：博导?????????????????

工作部门：中国科学院上海技术物理研究所 物理室?????????????

联系电话：021-25051874???????????????

电子邮箱：wangwj@mail.sitp.ac.cn????????????????????

二、工作简历

2007.07至今，中国科学院上海技术物理研究所。

2012.04-2012.12，新加坡南洋理工大学，Research fellow.

三、学术兼职

INFRARED PHYS TECHN、J. Appl. Phys、SENSORS等期刊审稿人

四、科研工作简介

面向量子信息技术的应用需求，主要从事InP基近红外单光子探测技术研究，内容涵盖： InP基雪崩单光子探测器及焦平面研究、人工微结构“光子学调控”光电器件研究、光电联合调控的理论模型与机理研究、近红外单光子探测技术工程应用研究。机理上突破了深能级缺陷态对暗电流的影响机制，通过电场调节和缺陷控制，解决高信噪比、近室温工作难题；突破小像元尺寸的高效光耦合机制，通过单片集成超构透镜，解决单光子焦平面阵列规模难以进一步扩大的难题。实现了近红外单光子探测器的自主可控，性能达到国际先进水平，并成功应用在典型量子激光成像、远距离激光测距等工程项目中。

五、代表性论文专利

1.?Jinghua Sun, Wenjuan Wang*, Yicheng Zhu, Zilu Guo, Yufei Qi, Weiming Xu，Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes, Infrared Millim. Waves，2024, 43 (1): 44.

2.?QI Yu-Fei, WANG Wen-Juan*, SUN Jing-Hua, Wu Wen, Liang Yan, QU Hui-Dan, Zhou Min, Lu Wei*, High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature, Infrared Millim. Waves,?2024, 43 (1): 1.

3.?Zilu Guo, Wenjuan Wang*, Yangjun Li, Huidan Qu, Liuyan Fan, Xiren Chen, Yicheng Zhu, Yue Gu， Yajie Wang，Changlin Zheng，Pingping Chen*, Wei Lu*, Correlation between MBE deoxidation conditions and InGaAs/InP APD performance, Infrared Millim. Waves，2024, 43 (1): 63.

4.?Zhu Y, Wang W*, Zhou M, Qu H, Li G, Chen P*, Lu W*，The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication，Materials Science in Semiconductor Processing, 2023, 166(107700).

5.?Zilu Guo , Wenjuan Wang*?, Yangjun Li, Huidan Qu, Liuyan Fan, Xiren Chen, Yicheng Zhu,?Yue Gu, Yajie Wang , Changlin Zheng , Pingping Chen*, and Wei Lu*, Material defects and dark currents in InGaAs/InP avalanche photodiode devices，IEEE Transactions on Electron Devices, 2022, 69(9): 4944-9

6.?Yicheng Zhu,?WenjuanWang*, Feilong Yu, Qingquan Liu, Zilu Guo, Guanhai Li,?Pingping Chen?and Wei Lu*, The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method，Micromachines, 2022, 13(9).

7.?Qing Li, Ting He, Kun Zhang, Yunlong Xiao, Ke Deng, Jinshui Miao*, Ning Li, Wenjuan Wang*, Wei Lu*, Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors Infrared Physics & Technology, 123 (2022) 104162

8.?Hao Han, Yicheng Zhu, Zilu Guo, Zhifeng Li, Huidan Qu, Wantian Gao, Ding Wang, Wenjuan?Wang*, High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity Optical and Quantum Electronics, (2021) 53:307.

9.?Min Zhou, Wenjuan Wang*, Huidan Qu, Hao Han, Yicheng Zhu, Zilu Guo, Lu Gui, Xianying Wang, Wei Lu, InGaAsP/InP single photon avalanche diodes with ultra high photon detection efficiency Optical and Quantum Electronics, (2020) 52:299

10.?J. Wen,?W. J. Wang*, X. R. Chen, N. Li, X. S. Chen, and W. Lu*, Origin of large dark current increase in InGaAs/InP avalanche photodiode, J. Appl. Phys, 2018, 123, 161530.

11.?J. Wen,?W. J. Wang*, N. Li, Z. F. Li, W. Lu*, Plasmonic optical convergence microcavity based on the metal-insulator-metal microstructure, Appl. Phys. Lett., 2017, 110, 231105.

12.?J. Wen,?W. J. Wang*, N. Li, Z. F. Li, W. Lu, Light enhancement by metal-insulator-metal plasmonic focusing cavity, Opt Quant Electron, 2016, 48:150.

13.?Q. Y. Zeng,?W. J. Wang*, J. Wen,?P. X. Xu, W. D. Hu, Q. Li, N. Li, W. Lu, Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes, Opt Quant Electron, 2015, 47: 1671-1677.

14.?Q.Y.Zeng,?W.J.Wang*, J.Wen, L.Huang, X.H.Liu, N.Li, W.Lu*, Effect of surface charge on the dark current of InGaAs/InP avalanche photodiodes, J. Appl. Phys, 2014, 115,164512.

15.?Q. Y. Zeng,?W. J. Wang*, W. D. Hu,?N. Li, W. Lu, Numerical Analysis of Multiplicat- ion Layer on Dark Current for InGaAs/InP Single Photon Avalan-che Diodes, Opt Quant Electron, 2014, 46:1203-1208.

16.?王文娟、诸毅诚、陈平平、陆卫、李冠海、陈效双、曲会丹、周敏、孙京华、郭子路、李阳俊、沈学??；一种对非理想刻蚀工艺制备介质超表面的补偿设计方法，2023.09.12，中国，202210123406.3.

17.?陆卫;?王文娟;?鹿建,?一种基于圆偏振态编码的全天时量子通信方法, 2020.11.24,?中国, 201810330223.2.

18.?顾溢;?陈平平;?王文娟;?马英杰;?张永刚;?邵秀梅;?李雪;?龚海梅，一种雪崩探测器过渡层结构及制备方法，2020.6.26,?中国, 201811274488.1.

19.?陆卫;?李倩;?曾巧玉;?陈效双;?王文娟;?李宁;?李志锋, APD红外探测器及其制作方法, 2014.12.10,?中国, 2011101990999.

20.李志锋;?景友亮;?陆卫;?李宁;?陈效双;?陈平平;?李天信;?王文娟;?甄红楼;王少伟,?适用于高光谱成像的波段选择性增强量子阱红外焦平面, 2017.5.3,?中国, 201510607541 .5.

五、培养学生情况

截至2024年7月，在读博士生2人，在读硕士生2人。

已毕业博士生4人，已毕业硕士生5人。就业率：100%.

主要就业去向：半导体相关企业、科研院所